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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-60APF02PBF

VS-60APF02PBF

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

3,270 0.00
- +

RFQ

VS-60APF02PBF

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 200 V 200 V 60A -40°C ~ 150°C 1.3 V @ 60 A
SF1604GHC0G

SF1604GHC0G

DIODE GEN PURP 200V 16A TO220AB

Taiwan Semiconductor Corporation

3,561 0.00
- +

RFQ

SF1604GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 975 mV @ 8 A
VS-60APF04PBF

VS-60APF04PBF

DIODE GEN PURP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division

3,996 0.00
- +

RFQ

VS-60APF04PBF

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 400 V 400 V 60A -40°C ~ 150°C 1.3 V @ 60 A
SF1604PT C0G

SF1604PT C0G

DIODE GEN PURP 200V 16A TO247AD

Taiwan Semiconductor Corporation

3,297 0.00
- +

RFQ

SF1604PT C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 950 mV @ 8 A
VS-60APF06PBF

VS-60APF06PBF

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division

2,499 0.00
- +

RFQ

VS-60APF06PBF

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 600 V 600 V 60A -40°C ~ 150°C 1.3 V @ 60 A
SF1604PTHC0G

SF1604PTHC0G

DIODE GEN PURP 200V 16A TO247AD

Taiwan Semiconductor Corporation

2,602 0.00
- +

RFQ

SF1604PTHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 200 V 200 V 16A -55°C ~ 150°C 950 mV @ 8 A
VS-60APF10PBF

VS-60APF10PBF

DIODE GEN PURP 1KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

3,515 0.00
- +

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 480 ns 100 µA @ 1000 V 1000 V 60A -40°C ~ 150°C 1.4 V @ 60 A
SF1605G C0G

SF1605G C0G

DIODE GEN PURP 300V 16A TO220AB

Taiwan Semiconductor Corporation

3,766 0.00
- +

RFQ

SF1605G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
VS-60APF12PBF

VS-60APF12PBF

DIODE GEN PURP 1.2KV 60A TO247AC

Vishay General Semiconductor - Diodes Division

2,287 0.00
- +

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 480 ns 100 µA @ 1200 V 1200 V 60A -40°C ~ 150°C 1.4 V @ 60 A
SF1605GHC0G

SF1605GHC0G

DIODE GEN PURP 300V 16A TO220AB

Taiwan Semiconductor Corporation

2,136 0.00
- +

RFQ

SF1605GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SF1605PT C0G

SF1605PT C0G

DIODE GEN PURP 300V 16A TO247AD

Taiwan Semiconductor Corporation

3,821 0.00
- +

RFQ

SF1605PT C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SF1605PTHC0G

SF1605PTHC0G

DIODE GEN PURP 300V 16A TO247AD

Taiwan Semiconductor Corporation

2,695 0.00
- +

RFQ

SF1605PTHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SF1606GHC0G

SF1606GHC0G

DIODE GEN PURP 400V 16A TO220AB

Taiwan Semiconductor Corporation

2,013 0.00
- +

RFQ

SF1606GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 8 A
SF1606PTHC0G

SF1606PTHC0G

DIODE GEN PURP 400V 16A TO247AD

Taiwan Semiconductor Corporation

3,980 0.00
- +

RFQ

SF1606PTHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 8 A
RL255-TP

RL255-TP

DIODE GEN PURP 2.5A 600V R3

Micro Commercial Co

3,862 0.00
- +

RFQ

RL255-TP

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 2.5A -55°C ~ 150°C 1 V @ 2.5 A
SF1607G C0G

SF1607G C0G

DIODE GEN PURP 500V 16A TO220AB

Taiwan Semiconductor Corporation

3,368 0.00
- +

RFQ

SF1607G C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 16A -55°C ~ 150°C 1.7 V @ 8 A
RL256-TP

RL256-TP

DIODE GEN PURP 2.5A 800V R3

Micro Commercial Co

3,253 0.00
- +

RFQ

RL256-TP

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 2.5A -55°C ~ 150°C 1 V @ 2.5 A
SF1607GHC0G

SF1607GHC0G

DIODE GEN PURP 500V 16A TO220AB

Taiwan Semiconductor Corporation

2,164 0.00
- +

RFQ

SF1607GHC0G

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 16A -55°C ~ 150°C 1.7 V @ 8 A
RL257-TP

RL257-TP

DIODE GEN PURP 2.5A 1000V R3

Micro Commercial Co

3,061 0.00
- +

RFQ

RL257-TP

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 35pF @ 4V, 1MHz - 5 µA @ 1000 V 1000 V 2.5A -55°C ~ 150°C 1 V @ 2.5 A
SF1607PT C0G

SF1607PT C0G

DIODE GEN PURP 500V 16A TO247AD

Taiwan Semiconductor Corporation

2,814 0.00
- +

RFQ

SF1607PT C0G

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 85pF @ 4V, 1MHz 35 ns 10 µA @ 500 V 500 V 16A -55°C ~ 150°C 1.7 V @ 8 A
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