+86 13640908945+86 13640908945 sales@chipscomponents.comsales@chipscomponents.com

Welcome to Zhuoliou industry co.,ltd

Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SCT3040KW7TL

SCT3040KW7TL

SICFET N-CH 1200V 56A TO263-7

Rohm Semiconductor

738 40.64
- +

RFQ

SCT3040KW7TL

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) - 52mOhm @ 20A, 18V 5.6V @ 10mA 107 nC @ 18 V +22V, -4V 1337 pF @ 800 V - 267W 175°C (TJ) Surface Mount
SCT3030AW7TL

SCT3030AW7TL

SICFET N-CH 650V 70A TO263-7

Rohm Semiconductor

442 41.47
- +

RFQ

SCT3030AW7TL

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 70A (Tc) - 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 267W 175°C (TJ) Surface Mount
SCT50N120

SCT50N120

SICFET N-CH 1200V 65A HIP247

STMicroelectronics

509 41.62
- +

RFQ

SCT50N120

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 20V 69mOhm @ 40A, 20V 3V @ 1mA 122 nC @ 20 V +25V, -10V 1900 pF @ 400 V - 318W (Tc) -55°C ~ 200°C (TJ) Through Hole
IXTH2N300P3HV

IXTH2N300P3HV

MOSFET N-CH 3000V 2A TO247HV

IXYS

291 44.66
- +

RFQ

IXTH2N300P3HV

Datasheet

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 2A (Tc) 10V 21Ohm @ 1A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 1890 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC7014UBC

EPC7014UBC

GAN FET HEMT 60V 1A COTS 4UB

EPC Space, LLC

3,816 209.48
- +

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 60 V 1A (Tc) 5V 580mOhm @ 1A, 5V 2.5V @ 140µA - +7V, -4V 22 pF @ 30 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG04N08AC

FBG04N08AC

GAN FET HEMT 40V 8A COTS 4FSMD-A

EPC Space, LLC

121 313.40
- +

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 40 V 8A (Tc) 5V 24mOhm @ 8A, 5V 2.5V @ 2mA 2.8 nC @ 5 V +6V, -4V 312 pF @ 20 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG04N30BC

FBG04N30BC

GAN FET HEMT 40V30A COTS 4FSMD-B

EPC Space, LLC

3,478 313.40
- +

RFQ

FBG04N30BC

Datasheet

Tray FSMD-B Active N-Channel GaNFET (Gallium Nitride) 40 V 30A (Tc) 5V 9mOhm @ 30A, 5V 2.5V @ 9mA 11.4 nC @ 5 V +6V, -4V 1300 pF @ 20 V - - -55°C ~ 150°C (TJ) Surface Mount
FBG30N04CC

FBG30N04CC

GAN FET HEMT 300V4A COTS 4FSMD-C

EPC Space, LLC

3,246 346.39
- +

RFQ

Tray - Active N-Channel GaNFET (Gallium Nitride) 300 V 4A (Tc) 5V 404mOhm @ 4A, 5V 2.8V @ 600µA 2.6 nC @ 5 V +6V, -4V 450 pF @ 150 V - - -55°C ~ 150°C (TJ) Surface Mount
2301

2301

P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8

Goford Semiconductor

8,624 0.40
- +

RFQ

2301

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 56mOhm @ 1.7A, 4.5V 900mV @ 250µA 12 nC @ 2.5 V ±10V 405 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
3401

3401

MOSFET P-CH 30V 4.2A SOT-23

Goford Semiconductor

10,885 0.47
- +

RFQ

3401

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 4.5V, 10V 55mOhm @ 4.2A, 10V 1.3V @ 250µA 9.5 nC @ 4.5 V ±12V 950 pF @ 15 V Standard 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G3035

G3035

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Goford Semiconductor

2,134 0.47
- +

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Tc) 4.5V, 10V 59mOhm @ 4A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 650 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G3404B

G3404B

N30V,RD(MAX)<22M@10V,RD(MAX)<35M

Goford Semiconductor

2,347 0.47
- +

RFQ

G3404B

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A - 22mOhm @ 4.2A, 10V 2V @ 250µA 12.2 nC @ 10 V ±20V 526 pF @ 15 V - 1.2W -55°C ~ 150°C (TJ) Surface Mount
PMZ290UNEYL

PMZ290UNEYL

NEXPERIA PMZ290U - 20V, N-CHANNE

NXP Semiconductors

78,532 0.02
- +

RFQ

PMZ290UNEYL

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68 nC @ 4.5 V ±8V 83 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NX7002BK215

NX7002BK215

NEXPERIA NX7002BK - SMALL SIGNAL

Nexperia USA Inc.

39,000 0.02
- +

RFQ

NX7002BK215

Datasheet

Bulk * Active - - - - - - - - - - - - - -
1002

1002

N100V,RD(MAX)<250M@10V,RD(MAX)<2

Goford Semiconductor

3,000 0.52
- +

RFQ

1002

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 2A - 250mOhm @ 2A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 387 pF @ 10 V - 1.3W -55°C ~ 150°C (TJ) Surface Mount
G6N02L

G6N02L

MOSFET N-CH 20V 6A SOT-23-3L

Goford Semiconductor

3,410 0.45
- +

RFQ

G6N02L

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 4.5V 11.3mOhm @ 3A, 4.5V 0.9V @ 250µA 12.5 nC @ 10 V ±12V 1140 pF @ 10 V Standard 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
3400L

3400L

N30V,RD(MAX)<27M@10V,RD(MAX)<33M

Goford Semiconductor

3,000 0.49
- +

RFQ

3400L

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A - 59mOhm @ 2.8A, 2.5V 1.4V @ 250µA 9.5 nC @ 4.5 V ±12V 820 pF @ 15 V - 1.4W -55°C ~ 150°C (TJ) Surface Mount
NX3008PBKMB,315

NX3008PBKMB,315

NEXPERIA NX3008PBKMB - SMALL SIG

Nexperia USA Inc.

30,000 0.03
- +

RFQ

NX3008PBKMB,315

Datasheet

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 300mA (Ta) - 4.1Ohm @ 200mA, 4.5V 1.1V @ 250µA 0.72 nC @ 4.5 V ±8V 46 pF @ 15 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G1002L

G1002L

N100V,RD(MAX)<250M@10V,VTH1.2V~2

Goford Semiconductor

3,000 0.52
- +

RFQ

G1002L

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 2A - 250mOhm @ 2A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 413 pF @ 50 V - 1.3W -55°C ~ 150°C (TJ) Surface Mount
06N06L

06N06L

N60V,RD(MAX)<42M@10V,RD(MAX)<46M

Goford Semiconductor

5,520 0.41
- +

RFQ

06N06L

Datasheet

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 5.5A - 42mOhm @ 3A, 10V 2.5V @ 250µA 2.4 nC @ 10 V ±20V 765 pF @ 30 V - 960mW -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Records«Prev1... 256257258259260261262263...2123Next»
Request a Quote
Part Number
Quantity
Contact
Email
Company
Comments
  • Help you to save your cost and time.
    Help you to save your cost and time.
    Reliable package for your goods.
    Reliable package for your goods.
    Fast Reliable Delivery to save time.
    Fast Reliable Delivery to save time.
    Quality premium after-sale service.
    Quality premium after-sale service.
    Copyright © 2023 Zhuoliou industry co.,ltd
    HOME

    HOME

    PRODUCT

    PRODUCT

    PHONE

    PHONE

    USER

    USER