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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK66N85X

IXFK66N85X

MOSFET N-CH 850V 66A TO264

IXYS

3,857 27.56
- +

RFQ

IXFK66N85X

Datasheet

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 66A (Tc) 10V 65mOhm @ 500mA, 10V 5.5V @ 8mA 230 nC @ 10 V ±30V 8900 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT94N60L2C3G

APT94N60L2C3G

MOSFET N-CH 600V 94A 264 MAX

Microchip Technology

2,740 27.73
- +

RFQ

APT94N60L2C3G

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 94A (Tc) 10V 35mOhm @ 60A, 10V 3.9V @ 5.4mA 640 nC @ 10 V ±20V 13600 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010JLLU2

APT5010JLLU2

MOSFET N-CH 500V 41A SOT227

Microchip Technology

2,791 30.11
- +

RFQ

APT5010JLLU2

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 96 nC @ 10 V ±30V 4360 pF @ 25 V - 378W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFX320N17T2

IXFX320N17T2

MOSFET N-CH 170V 320A PLUS247-3

IXYS

2,791 31.23
- +

RFQ

IXFX320N17T2

Datasheet

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 320A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 640 nC @ 10 V ±20V 45000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK320N17T2

IXFK320N17T2

MOSFET N-CH 170V 320A TO264AA

IXYS

3,517 31.40
- +

RFQ

IXFK320N17T2

Datasheet

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 320A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 640 nC @ 10 V ±20V 45000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN64N60P

IXFN64N60P

MOSFET N-CH 600V 50A SOT227B

IXYS

3,228 33.90
- +

RFQ

IXFN64N60P

Datasheet

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 96mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFK64N60Q3

IXFK64N60Q3

MOSFET N-CH 600V 64A TO264AA

IXYS

2,073 38.05
- +

RFQ

IXFK64N60Q3

Datasheet

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 6.5V @ 4mA 190 nC @ 10 V ±30V 9930 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
GA20JT12-263

GA20JT12-263

TRANS SJT 1200V 45A D2PAK

GeneSiC Semiconductor

2,726 38.13
- +

RFQ

GA20JT12-263

Datasheet

Tube - Active - SiC (Silicon Carbide Junction Transistor) 1200 V 45A (Tc) - 60mOhm @ 20A - - - 3091 pF @ 800 V - 282W (Tc) 175°C (TJ) Surface Mount
MSC015SMA070S

MSC015SMA070S

SICFET N-CH 700V 126A D3PAK

Microchip Technology

2,981 39.18
- +

RFQ

MSC015SMA070S

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 126A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +23V, -10V 4500 pF @ 700 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT10M11LVRG

APT10M11LVRG

MOSFET N-CH 100V 100A TO264

Microchip Technology

3,455 41.35
- +

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 2.5mA 450 nC @ 10 V ±30V 10300 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK400N15X3

IXFK400N15X3

MOSFET N-CH 150V 400A TO264

IXYS

3,374 41.65
- +

RFQ

IXFK400N15X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 3mOhm @ 200A, 10V 4.5V @ 8mA 365 nC @ 10 V ±20V 23700 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8020JLL

APT8020JLL

MOSFET N-CH 800V 33A ISOTOP

Microchip Technology

2,172 44.73
- +

RFQ

APT8020JLL

Datasheet

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 800 V 33A (Tc) 10V 200mOhm @ 16.5A, 10V 5V @ 2.5mA 195 nC @ 10 V ±30V 5200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M65JLL

APT50M65JLL

MOSFET N-CH 500V 58A ISOTOP

Microchip Technology

2,165 45.82
- +

RFQ

APT50M65JLL

Datasheet

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 29A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTB62N50L

IXTB62N50L

MOSFET N-CH 500V 62A PLUS264

IXYS

3,588 58.01
- +

RFQ

IXTB62N50L

Datasheet

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 62A (Tc) 20V 100mOhm @ 31A, 20V 5.5V @ 250µA 550 nC @ 20 V ±30V 11500 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC100SM70JCU2

MSC100SM70JCU2

SICFET N-CH 700V 124A SOT227

Microchip Technology

2,774 61.78
- +

RFQ

MSC100SM70JCU2

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 124A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 365W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MSC100SM70JCU3

MSC100SM70JCU3

SICFET N-CH 700V 124A SOT227

Microchip Technology

3,708 61.78
- +

RFQ

MSC100SM70JCU3

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 700 V 124A (Tc) 20V 19mOhm @ 40A, 20V 2.4V @ 4mA 215 nC @ 20 V +25V, -10V 4500 pF @ 700 V - 365W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT50M38JLL

APT50M38JLL

MOSFET N-CH 500V 88A ISOTOP

Microchip Technology

2,529 79.70
- +

RFQ

APT50M38JLL

Datasheet

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 88A (Tc) 10V 38mOhm @ 44A, 10V 5V @ 5mA 270 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN70N120SK

IXFN70N120SK

SICFET N-CH 1200V 68A SOT227B

IXYS

2,272 129.31
- +

RFQ

IXFN70N120SK

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 20V 34mOhm @ 50A, 20V 4V @ 15mA 161 nC @ 20 V +20V, -5V 2790 pF @ 1000 V - - -40°C ~ 175°C (TJ) Chassis Mount
APL502LG

APL502LG

MOSFET N-CH 500V 58A TO264

Microchip Technology

3,134 59.11
- +

RFQ

APL502LG

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 15V 90mOhm @ 29A, 12V 4V @ 2.5mA - ±30V 9000 pF @ 25 V - 730W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSM180C12P3C202

BSM180C12P3C202

SICFET N-CH 1200V 180A MODULE

Rohm Semiconductor

3,318 590.40
- +

RFQ

BSM180C12P3C202

Datasheet

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 180A (Tc) - - 5.6V @ 50mA - +22V, -4V 9000 pF @ 10 V - 880W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
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