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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SE70PG-M3/86A

SE70PG-M3/86A

DIODE GEN PURP 400V 2.9A TO277A

Vishay General Semiconductor - Diodes Division

2,645 0.38
- +

RFQ

SE70PG-M3/86A

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 76pF @ 4V, 1MHz 2.6 µs 20 µA @ 400 V 400 V 2.9A (DC) -55°C ~ 175°C 1.05 V @ 7 A
VS-30WQ04FNHM3

VS-30WQ04FNHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division

3,949 0.84
- +

RFQ

VS-30WQ04FNHM3

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 189pF @ 5V, 1MHz - 2 mA @ 40 V 40 V 3.5A -40°C ~ 150°C 530 mV @ 3 A
5822SMJE3/TR13

5822SMJE3/TR13

DIODE SCHOTTKY 40V 3A SMCJ

Microchip Technology

3,813 1.31
- +

RFQ

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1.5 mA @ 40 V 40 V 3A -55°C ~ 150°C 500 mV @ 3 A
FESF16HTHE3_A/P

FESF16HTHE3_A/P

DIODE GEN PURP 500V 16A ITO220AC

Vishay General Semiconductor - Diodes Division

3,215 1.11
- +

RFQ

FESF16HTHE3_A/P

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 500 V 500 V 16A -65°C ~ 150°C 1.5 V @ 16 A
RU 3BV1

RU 3BV1

DIODE GEN PURP 800V 1.1A AXIAL

Sanken

2,637 0.35
- +

RFQ

RU 3BV1

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 600 V 800 V 1.1A -40°C ~ 150°C 1.5 V @ 1 A
SE70PJ-M3/86A

SE70PJ-M3/86A

DIODE GEN PURP 600V 2.9A TO277A

Vishay General Semiconductor - Diodes Division

3,541 0.38
- +

RFQ

SE70PJ-M3/86A

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 76pF @ 4V, 1MHz 2.6 µs 20 µA @ 600 V 600 V 2.9A (DC) -55°C ~ 175°C 1.05 V @ 7 A
VS-30WQ04FNTRHM3

VS-30WQ04FNTRHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division

3,795 0.84
- +

RFQ

VS-30WQ04FNTRHM3

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 189pF @ 5V, 1MHz - 2 mA @ 40 V 40 V 3.5A -40°C ~ 150°C 530 mV @ 3 A
VS-10ETF04-M3

VS-10ETF04-M3

DIODE GEN PURP 400V 10A TO220AC

Vishay General Semiconductor - Diodes Division

2,352 1.31
- +

RFQ

VS-10ETF04-M3

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 200 ns 100 µA @ 400 V 400 V 10A -45°C ~ 150°C 1.2 V @ 10 A
JAN1N914UR/TR

JAN1N914UR/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

2,376 3.30
- +

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/116 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 20 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 175°C 1.2 V @ 50 mA
RU 3CV1

RU 3CV1

DIODE GEN PURP 1KV 1.5A AXIAL

Sanken

2,822 0.35
- +

RFQ

RU 3CV1

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 1000 V 1000 V 1.5A -40°C ~ 150°C 2 V @ 1.5 A
VT5200-E3/4W

VT5200-E3/4W

DIODE SCHOTTKY 5A 200V TO-220AC

Vishay General Semiconductor - Diodes Division

2,983 0.38
- +

RFQ

VT5200-E3/4W

Datasheet

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 200 V 200 V 5A -40°C ~ 150°C 1.6 V @ 5 A
FESF16JTHE3_A/P

FESF16JTHE3_A/P

DIODE GEN PURP 600V 16A ITO220AC

Vishay General Semiconductor - Diodes Division

2,447 1.11
- +

RFQ

FESF16JTHE3_A/P

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 16A -65°C ~ 150°C 1.5 V @ 16 A
VS-30WQ04FNTRLHM3

VS-30WQ04FNTRLHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division

3,287 0.84
- +

RFQ

VS-30WQ04FNTRLHM3

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 189pF @ 5V, 1MHz - 2 mA @ 40 V 40 V 3.5A -40°C ~ 150°C 530 mV @ 3 A
VS-10ETF12-M3

VS-10ETF12-M3

DIODE GEN PURP 1.2KV 10A TO220AC

Vishay General Semiconductor - Diodes Division

3,092 1.31
- +

RFQ

VS-10ETF12-M3

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 310 ns 100 µA @ 1200 V 1200 V 10A -40°C ~ 150°C 1.33 V @ 10 A
1N4245/TR

1N4245/TR

RECTIFIER UFR,FRR

Microchip Technology

3,600 3.30
- +

RFQ

1N4245/TR

Datasheet

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 3 A
RU 3MV1

RU 3MV1

DIODE GEN PURP 400V 1.5A AXIAL

Sanken

2,726 0.35
- +

RFQ

RU 3MV1

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 10 µA @ 400 V 400 V 1.5A -40°C ~ 150°C 1.1 V @ 1.5 A
UF5405-E3/73

UF5405-E3/73

DIODE GEN PURP 500V 3A DO201AD

Vishay General Semiconductor - Diodes Division

2,830 0.38
- +

RFQ

UF5405-E3/73

Datasheet

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 36pF @ 4V, 1MHz 75 ns 10 µA @ 500 V 500 V 3A -55°C ~ 150°C 1.7 V @ 3 A
VS-8TQ080STRLHM3

VS-8TQ080STRLHM3

DIODE SCHOTTKY 80V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,973 1.11
- +

RFQ

VS-8TQ080STRLHM3

Datasheet

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 500pF @ 5V, 1MHz - 550 µA @ 80 V 80 V 8A -55°C ~ 175°C 720 mV @ 8 A
VS-30WQ04FNTRRHM3

VS-30WQ04FNTRRHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division

3,373 0.84
- +

RFQ

VS-30WQ04FNTRRHM3

Datasheet

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 189pF @ 5V, 1MHz - 2 mA @ 40 V 40 V 3.5A -40°C ~ 150°C 530 mV @ 3 A
VS-10ETF02-M3

VS-10ETF02-M3

DIODE GEN PURP 200V 10A TO220AC

Vishay General Semiconductor - Diodes Division

2,945 1.31
- +

RFQ

VS-10ETF02-M3

Datasheet

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 200 ns 100 µA @ 200 V 200 V 10A -40°C ~ 150°C 1.2 V @ 10 A
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