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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
JAN1N5614 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	2,906	4.31	- + RFQ	Datasheet	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 200 V	200 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
DSS10-01AS-TUB DIODE SCHOTTKY 100V 10A TO263AB IXYS	3,695	1.73	- + RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	300 µA @ 100 V	100 V	10A	-55°C ~ 175°C	840 mV @ 10 A
TSPB5H120S S1G DIODE SCHOTTKY 120V 5A SMPC4.0 Taiwan Semiconductor Corporation	3,833	0.58	- + RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	150 µA @ 120 V	120 V	5A	-55°C ~ 150°C	740 mV @ 5 A
1N4938UR-1 DIODE GEN PURP 175V 100MA DO213 Microchip Technology	3,759	3.03	- + RFQ	Datasheet	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	50 ns	100 nA @ 175 V	175 V	100mA	-65°C ~ 175°C	1 V @ 100 mA
SE20DG-M3/I DIODE GEN PURP 400V 3.9A TO263AC Vishay General Semiconductor - Diodes Division	3,490	1.21	- + RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	150pF @ 4V, 1MHz	3 µs	25 µA @ 400 V	400 V	3.9A	-55°C ~ 175°C	1.2 V @ 20 A
JAN1N5615 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	3,711	4.31	- + RFQ	Datasheet	Bulk	Military, MIL-PRF-19500/429	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	150 ns	500 nA @ 200 V	200 V	1A	-65°C ~ 175°C	1.6 V @ 3 A
VS-APH3006LHN3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	3,277	1.73	- + RFQ	Datasheet	Tube	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	26 ns	30 µA @ 600 V	600 V	30A	-55°C ~ 175°C	2.65 V @ 30 A
TSPB5H150S S1G DIODE SCHOTTKY 150V 5A SMPC4.0 Taiwan Semiconductor Corporation	3,253	0.54	- + RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 150 V	150 V	5A	-55°C ~ 150°C	840 mV @ 5 A
1N5616/TR STD RECTIFIER Microchip Technology	2,433	3.03	- + RFQ	Datasheet	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 400 V	400 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
NTS10120MFST1G DIODE SCHOTTKY 120V 10A 5DFN onsemi	2,405	1.11	- + RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Obsolete	Surface Mount	-	-	30 µA @ 120 V	120 V	10A	-55°C ~ 175°C	820 mV @ 10 A
JAN1N5616 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	2,727	4.31	- + RFQ	Datasheet	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 400 V	400 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
VS-EPU3006LHN3 DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division	2,420	1.73	- + RFQ	Datasheet	Tube	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	30 µA @ 600 V	600 V	30A	-55°C ~ 175°C	2 V @ 30 A
RFVS8TG6SGC9 DIODE GEN PURP 600V 8A TO220AC Rohm Semiconductor	939	1.20	- + RFQ	Datasheet	Tube,Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	10 µA @ 600 V	600 V	8A	150°C (Max)	3 V @ 8 A
JANTX1N5807 DIODE GEN PURP 50V 3A AXIAL Microchip Technology	3,920	7.13	- + RFQ	Datasheet	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 10V, 1MHz	30 ns	5 µA @ 50 V	50 V	3A	-65°C ~ 175°C	875 mV @ 4 A
VF10150S-E3/4W DIODE SCHOTTKY 150V 10A ITO220AB Vishay General Semiconductor - Diodes Division	2,340	0.59	- + RFQ	Datasheet	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	150 µA @ 150 V	150 V	10A	-55°C ~ 150°C	1.2 V @ 10 A
JAN1N5618 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	3,939	4.31	- + RFQ	Datasheet	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 600 V	600 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
VS-16FR10 DIODE GEN PURP 100V 16A DO203AA Vishay General Semiconductor - Diodes Division	2,675	3.04	- + RFQ	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	12 mA @ 100 V	100 V	16A	-65°C ~ 175°C	1.23 V @ 50 A
SE12DGHM3/I DIODE GEN PURP 400V 3.2A TO263AC Vishay General Semiconductor - Diodes Division	2,107	1.74	- + RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101, eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	90pF @ 4V, 1MHz	3 µs	20 µA @ 400 V	400 V	3.2A	-55°C ~ 175°C	1.15 V @ 12 A
DST1545S DIODE SCHOTTKY 15A 45V TO277B Littelfuse Inc.	2,207	1.19	- + RFQ	Datasheet	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	868pF @ 5V, 1MHz	-	1.5 mA @ 45 V	45 V	15A	-55°C ~ 150°C	580 mV @ 15 A
JANTX1N5809 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	3,558	7.13	- + RFQ	Datasheet	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 10V, 1MHz	30 ns	5 µA @ 100 V	100 V	3A	-65°C ~ 175°C	875 mV @ 4 A