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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH80N65X2

IXTH80N65X2

MOSFET N-CH 650V 80A TO247

IXYS

2,238 13.89
- +

RFQ

IXTH80N65X2

Datasheet

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 40mOhm @ 40A, 10V 4.5V @ 4mA 144 nC @ 10 V ±30V 7753 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH40N85X

IXFH40N85X

MOSFET N-CH 850V 40A TO247

IXYS

3,038 13.98
- +

RFQ

IXFH40N85X

Datasheet

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 40A (Tc) 10V 145mOhm @ 500mA, 10V 5.5V @ 4mA 98 nC @ 10 V ±30V 3700 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZ120R140M1HXKSA1

IMZ120R140M1HXKSA1

SICFET N-CH 1.2KV 19A TO247-4

Infineon Technologies

2,703 14.08
- +

RFQ

IMZ120R140M1HXKSA1

Datasheet

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A (Tc) 15V, 18V 182mOhm @ 6A, 18V 5.7V @ 2.5mA 13 nC @ 18 V +23V, -7V 454 pF @ 800 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC080SMA120B4

MSC080SMA120B4

SICFET N-CH 1200V 37A TO247-4

Microchip Technology

2,474 14.09
- +

RFQ

MSC080SMA120B4

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK64N60P3

IXFK64N60P3

MOSFET N-CH 600V 64A TO264AA

IXYS

3,256 14.14
- +

RFQ

IXFK64N60P3

Datasheet

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 95mOhm @ 32A, 10V 5V @ 4mA 145 nC @ 10 V ±30V 9900 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK220N17T2

IXFK220N17T2

MOSFET N-CH 170V 220A TO264AA

IXYS

2,857 14.21
- +

RFQ

IXFK220N17T2

Datasheet

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 220A (Tc) 10V 6.3mOhm @ 60A, 10V 5V @ 8mA 500 nC @ 10 V ±20V 31000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT30M70BVRG

APT30M70BVRG

MOSFET N-CH 300V 48A TO247

Microchip Technology

2,517 14.22
- +

RFQ

APT30M70BVRG

Datasheet

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 48A (Tc) 10V 70mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 5870 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH2N150L

IXTH2N150L

MOSFET N-CH 1500V 2A TO247

IXYS

2,015 14.27
- +

RFQ

IXTH2N150L

Datasheet

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1500 V 2A (Tc) 20V 15Ohm @ 1A, 20V 8.5V @ 250µA 72 nC @ 20 V ±30V 1470 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT100N30X3HV

IXFT100N30X3HV

MOSFET N-CH 300V 100A TO268HV

IXYS

2,523 14.46
- +

RFQ

IXFT100N30X3HV

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 100A (Tc) 10V 13.5mOhm @ 50A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7660 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MSC080SMA120S

MSC080SMA120S

SICFET N-CH 1200V 35A D3PAK

Microchip Technology

2,304 14.66
- +

RFQ

MSC080SMA120S

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STW45NM60

STW45NM60

MOSFET N-CH 650V 45A TO247-3

STMicroelectronics

2,569 14.67
- +

RFQ

STW45NM60

Datasheet

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 110mOhm @ 22.5A, 10V 5V @ 250µA 134 nC @ 10 V ±30V 3800 pF @ 25 V - 417W (Tc) 150°C (TJ) Through Hole
IPZA60R037P7XKSA1

IPZA60R037P7XKSA1

MOSFET N-CH 600V 76A TO247-4

Infineon Technologies

3,277 1.00
- +

RFQ

IPZA60R037P7XKSA1

Datasheet

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 37mOhm @ 29.5A, 10V 4V @ 1.48mA 121 nC @ 10 V ±20V 5243 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK140N25T

IXFK140N25T

MOSFET N-CH 250V 140A TO264AA

IXYS

2,678 14.91
- +

RFQ

IXFK140N25T

Datasheet

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 140A (Tc) 10V 17mOhm @ 60A, 10V 5V @ 4mA 255 nC @ 10 V ±20V 19000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK39A60W,S4VX

TK39A60W,S4VX

MOSFET N-CH 600V 38.8A TO220SIS

Toshiba Semiconductor and Storage

3,558 10.21
- +

RFQ

TK39A60W,S4VX

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) Through Hole
IPW60R031CFD7XKSA1

IPW60R031CFD7XKSA1

MOSFET N-CH 650V 63A TO247-3

Infineon Technologies

3,759 15.14
- +

RFQ

IPW60R031CFD7XKSA1

Datasheet

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 31mOhm @ 32.6A, 10V 4.5V @ 1.63mA 141 nC @ 10 V ±20V 5623 pF @ 400 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R041P6FKSA1

IPW60R041P6FKSA1

MOSFET N-CH 600V 77.5A TO247-3

Infineon Technologies

2,119 15.42
- +

RFQ

IPW60R041P6FKSA1

Datasheet

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 77.5A (Tc) 10V 41mOhm @ 35.5A, 10V 4.5V @ 2.96mA 170 nC @ 10 V ±20V 8180 pF @ 100 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK62J60W,S1VQ

TK62J60W,S1VQ

MOSFET N-CH 600V 61.8A TO3P

Toshiba Semiconductor and Storage

3,388 15.59
- +

RFQ

TK62J60W,S1VQ

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 61.8A (Ta) 10V 38mOhm @ 30.9A, 10V 3.7V @ 3.1mA 180 nC @ 10 V ±30V 6500 pF @ 300 V Super Junction 400W (Tc) 150°C (TJ) Through Hole
IXTK140N20P

IXTK140N20P

MOSFET N-CH 200V 140A TO264

IXYS

3,317 15.69
- +

RFQ

IXTK140N20P

Datasheet

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 140A (Tc) 10V 18mOhm @ 70A, 10V 5V @ 500µA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTK200N10P

IXTK200N10P

MOSFET N-CH 100V 200A TO264

IXYS

2,229 15.69
- +

RFQ

IXTK200N10P

Datasheet

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 7.5mOhm @ 100A, 10V 5V @ 500µA 240 nC @ 10 V ±20V 7600 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK39N60W,S1VF

TK39N60W,S1VF

MOSFET N CH 600V 38.8A TO247

Toshiba Semiconductor and Storage

3,196 10.89
- +

RFQ

TK39N60W,S1VF

Datasheet

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 38.8A (Ta) 10V 65mOhm @ 19.4A, 10V 3.7V @ 1.9mA 110 nC @ 10 V ±30V 4100 pF @ 300 V Super Junction 270W (Tc) 150°C (TJ) Through Hole
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