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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FCH76N60NF

FCH76N60NF

MOSFET N-CH 600V 72.8A TO247-3

onsemi

2,154 19.62
- +

RFQ

FCH76N60NF

Datasheet

Bulk,Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 72.8A (Tc) 10V 38mOhm @ 38A, 10V 5V @ 250µA 300 nC @ 10 V ±30V 11045 pF @ 100 V - 543W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX102N65X2

IXTX102N65X2

MOSFET N-CH 650V 102A PLUS247-3

IXYS

2,807 19.80
- +

RFQ

IXTX102N65X2

Datasheet

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 102A (Tc) 10V 30mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTW35N65G2VAG

SCTW35N65G2VAG

SICFET N-CH 650V 45A HIP247

STMicroelectronics

2,641 20.40
- +

RFQ

SCTW35N65G2VAG

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 240W (Tc) -55°C ~ 200°C (TJ) Through Hole
IXFK94N50P2

IXFK94N50P2

MOSFET N-CH 500V 94A TO264AA

IXYS

3,652 20.89
- +

RFQ

IXFK94N50P2

Datasheet

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 94A (Tc) 10V 55mOhm @ 500mA, 10V 5V @ 8mA 220 nC @ 10 V ±30V 13700 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT12060LVRG

APT12060LVRG

MOSFET N-CH 1200V 20A TO264

Microchip Technology

2,744 21.15
- +

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 600mOhm @ 10A, 10V 4V @ 2.5mA 650 nC @ 10 V ±30V 9500 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT2160KEGC11

SCT2160KEGC11

1200V, 22A, THD, SILICON-CARBIDE

Rohm Semiconductor

3,799 21.54
- +

RFQ

SCT2160KEGC11

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
IXFT44N50P

IXFT44N50P

MOSFET N-CH 500V 44A TO268

IXYS

2,762 12.18
- +

RFQ

IXFT44N50P

Datasheet

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 5V @ 4mA 98 nC @ 10 V ±30V 5440 pF @ 25 V - 658W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT2160KEHRC11

SCT2160KEHRC11

1200V, 22A, THD, SILICON-CARBIDE

Rohm Semiconductor

2,415 22.76
- +

RFQ

SCT2160KEHRC11

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
SCTW40N120G2VAG

SCTW40N120G2VAG

SICFET N-CH 1200V 33A HIP247

STMicroelectronics

3,786 23.12
- +

RFQ

SCTW40N120G2VAG

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 33A (Tc) 18V 105mOhm @ 20A, 18V 5V @ 1mA 63 nC @ 18 V +22V, -10V 1230 pF @ 800 V - 290W (Tc) -55°C ~ 200°C (TJ) Through Hole
SCT4026DRC15

SCT4026DRC15

750V, 26M, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

3,686 23.15
- +

RFQ

SCT4026DRC15

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
SCT4026DEC11

SCT4026DEC11

750V, 26M, 3-PIN THD, TRENCH-STR

Rohm Semiconductor

3,070 23.15
- +

RFQ

SCT4026DEC11

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
NVH4L040N120SC1

NVH4L040N120SC1

SICFET N-CH 1200V 58A TO247-4

onsemi

2,294 23.36
- +

RFQ

NVH4L040N120SC1

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1762 pF @ 800 V - 319W (Tc) -55°C ~ 175°C (TJ) Through Hole
SCT4036KEC11

SCT4036KEC11

1200V, 36M, 3-PIN THD, TRENCH-ST

Rohm Semiconductor

2,262 23.52
- +

RFQ

SCT4036KEC11

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
SCT4036KRC15

SCT4036KRC15

1200V, 36M, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

2,425 23.52
- +

RFQ

SCT4036KRC15

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
APT10078BLLG

APT10078BLLG

MOSFET N-CH 1000V 14A TO247

Microchip Technology

3,340 23.63
- +

RFQ

APT10078BLLG

Datasheet

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V ±30V 2525 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT4026DEHRC11

SCT4026DEHRC11

750V, 56A, 3-PIN THD, TRENCH-STR

Rohm Semiconductor

3,425 23.84
- +

RFQ

SCT4026DEHRC11

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
SCT4026DRHRC15

SCT4026DRHRC15

750V, 56A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor

3,103 23.84
- +

RFQ

SCT4026DRHRC15

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
IPW65R075CFD7AXKSA1

IPW65R075CFD7AXKSA1

MOSFET N-CH 650V 32A TO247-3-41

Infineon Technologies

3,241 12.66
- +

RFQ

IPW65R075CFD7AXKSA1

Datasheet

Tube Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 75mOhm @ 16.4A, 10V 4.5V @ 820µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -40°C ~ 150°C (TJ) Through Hole
SCT4036KEHRC11

SCT4036KEHRC11

1200V, 43A, 3-PIN THD, TRENCH-ST

Rohm Semiconductor

2,897 24.23
- +

RFQ

SCT4036KEHRC11

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
SCT4036KRHRC15

SCT4036KRHRC15

1200V, 43A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor

2,760 24.23
- +

RFQ

SCT4036KRHRC15

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
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