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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N5399G B0G

1N5399G B0G

DIODE GEN PURP 1.5A DO204AC

Taiwan Semiconductor Corporation

2,268 0.00
- +

RFQ

1N5399G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 1000 V - 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HS3G R7

HS3G R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2,465 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5399GHB0G

1N5399GHB0G

DIODE GEN PURP 1.5A DO204AC

Taiwan Semiconductor Corporation

3,519 0.00
- +

RFQ

1N5399GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 1000 V - 1.5A -55°C ~ 150°C 1 V @ 1.5 A
S5J M6

S5J M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2,202 0.00
- +

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.15 V @ 5 A
1N5400G B0G

1N5400G B0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

2,453 0.00
- +

RFQ

1N5400G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 1.1 V @ 3 A
HS3J M6

HS3J M6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3,658 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
1N5400GHB0G

1N5400GHB0G

DIODE GEN PURP 50V 3A DO201AD

Taiwan Semiconductor Corporation

2,931 0.00
- +

RFQ

1N5400GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 1.1 V @ 3 A
HS5D R6

HS5D R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3,680 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N5401G B0G

1N5401G B0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3,606 0.00
- +

RFQ

1N5401G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.1 V @ 3 A
S10MC M6

S10MC M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2,993 0.00
- +

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 10A (DC) -55°C ~ 150°C 1.1 V @ 10 A
1N5401GHB0G

1N5401GHB0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

2,147 0.00
- +

RFQ

1N5401GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 1.1 V @ 3 A
HS5M R6

HS5M R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3,755 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 5A (DC) -55°C ~ 150°C 1.7 V @ 5 A
1N5402G B0G

1N5402G B0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

2,334 0.00
- +

RFQ

1N5402G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
MUR315S R6G

MUR315S R6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2,407 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C 875 mV @ 3 A
1N5402GHB0G

1N5402GHB0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

3,031 0.00
- +

RFQ

1N5402GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
HS5D M6

HS5D M6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3,935 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N5404G B0G

1N5404G B0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

2,580 0.00
- +

RFQ

1N5404G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
SK52C R7

SK52C R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3,096 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 20 V 20 V 5A -55°C ~ 150°C 550 mV @ 5 A
1N5404GHB0G

1N5404GHB0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

3,739 0.00
- +

RFQ

1N5404GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 3A -55°C ~ 150°C 1 V @ 3 A
S5B R6G

S5B R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3,408 0.00
- +

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 1.15 V @ 5 A
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