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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N5406G B0G

1N5406G B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

3,824 0.00
- +

RFQ

1N5406G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1 V @ 3 A
HS5F R6

HS5F R6

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2,893 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 5A (DC) -55°C ~ 150°C 1 V @ 5 A
1N5406GHB0G

1N5406GHB0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

2,996 0.00
- +

RFQ

1N5406GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1 V @ 3 A
RS3M R7

RS3M R7

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2,300 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 500 ns 10 µA @ 1000 V 1000 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5407G B0G

1N5407G B0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

2,514 0.00
- +

RFQ

1N5407G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -55°C ~ 150°C 1 V @ 3 A
ESH3D R6G

ESH3D R6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

3,669 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C 900 mV @ 3 A
1N5407GHB0G

1N5407GHB0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

2,801 0.00
- +

RFQ

1N5407GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 3A -55°C ~ 150°C 1 V @ 3 A
ES3F M6

ES3F M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2,998 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 30pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5408G B0G

1N5408G B0G

DIODE GEN PURP 3A DO201AD

Taiwan Semiconductor Corporation

2,588 0.00
- +

RFQ

1N5408G B0G

Datasheet

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1 V @ 3 A
S8JC R6G

S8JC R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3,947 0.00
- +

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 48pF @ 4V, 1MHz - 10 µA @ 600 V 600 V 8A (DC) -55°C ~ 150°C 985 mV @ 8 A
1N5408GHB0G

1N5408GHB0G

DIODE GEN PURP 3A DO201AD

Taiwan Semiconductor Corporation

3,969 0.00
- +

RFQ

1N5408GHB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1 V @ 3 A
MUR320S R7

MUR320S R7

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2,005 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 25 ns 5 µA @ 200 V 200 V 3A -55°C ~ 175°C 875 mV @ 3 A
1N5817 B0G

1N5817 B0G

DIODE SCHOTTKY 20V 1A DO204AL

Taiwan Semiconductor Corporation

2,117 0.00
- +

RFQ

1N5817 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 20 V 20 V 1A -55°C ~ 125°C 450 mV @ 1 A
S3M R6G

S3M R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2,571 0.00
- +

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 1000 V 1000 V 3A (DC) -55°C ~ 150°C 1.15 V @ 3 A
1N5817HB0G

1N5817HB0G

DIODE SCHOTTKY 20V 1A DO204AL

Taiwan Semiconductor Corporation

2,502 0.00
- +

RFQ

1N5817HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 20 V 20 V 1A -55°C ~ 125°C 450 mV @ 1 A
RS3K R6G

RS3K R6G

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2,800 0.00
- +

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 500 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.3 V @ 3 A
1N5818 B0G

1N5818 B0G

DIODE SCHOTTKY 30V 1A DO204AL

Taiwan Semiconductor Corporation

2,493 0.00
- +

RFQ

1N5818 B0G

Datasheet

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 30 V 30 V 1A -55°C ~ 125°C 550 mV @ 1 A
S10KC R6G

S10KC R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2,063 0.00
- +

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz - 1 µA @ 800 V 800 V 10A (DC) -55°C ~ 150°C 1.1 V @ 10 A
1N5818HB0G

1N5818HB0G

DIODE SCHOTTKY 30V 1A DO204AL

Taiwan Semiconductor Corporation

2,839 0.00
- +

RFQ

1N5818HB0G

Datasheet

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 55pF @ 4V, 1MHz - 1 mA @ 30 V 30 V 1A -55°C ~ 125°C 550 mV @ 1 A
S5A R7

S5A R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2,006 0.00
- +

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 5A -55°C ~ 150°C 1.15 V @ 5 A
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