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Mfr. Part #	Availability	Price	Quantity	Datasheet	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
ES 1F DIODE GEN PURP 1.5KV 500MA AXIAL Sanken	2,470	0.59	- + RFQ	Datasheet	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1500 V	1500 V	500mA	-40°C ~ 150°C	2 V @ 500 mA
VS-EBU15006-F4 DIODE GP 600V 150A POWERTAB Vishay General Semiconductor - Diodes Division	3,643	4.35	- + RFQ	Datasheet	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	8 µA @ 600 V	600 V	150A	-55°C ~ 175°C	1.63 V @ 150 A
APT15DQ60SG FRED DQ 600 V 15 A TO-268 Microchip Technology	2,806	3.13	- + RFQ	Datasheet	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	21 ns	25 µA @ 600 V	-	15A	-55°C ~ 175°C	2.4 V @ 15 A
HSM835J/TR13 DIODE SCHOTTKY 35V 8A DO214AB Microchip Technology	3,102	1.76	- + RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 35 V	35 V	8A	-55°C ~ 175°C	620 mV @ 8 A
RN 4Z DIODE GEN PURP 200V 3.5A AXIAL Sanken	2,460	0.55	- + RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	100 ns	50 µA @ 200 V	200 V	3.5A	-40°C ~ 150°C	920 mV @ 3.5 A
JAN1N5802 DIODE GEN PURP 50V 2.5A AXIAL Microchip Technology	3,089	7.18	- + RFQ		Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 10V, 1MHz	25 ns	1 µA @ 50 V	50 V	2.5A	-65°C ~ 175°C	975 mV @ 2.5 A
BYV98-200-TAP DIODE AVALANCHE 200V 4A SOD64 Vishay General Semiconductor - Diodes Division	2,138	0.59	- + RFQ	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	35 ns	10 µA @ 200 V	200 V	4A	-55°C ~ 175°C	1.1 V @ 5 A
STPSC20065CWL DFD THYR TRIAC & RECTIFIER STMicroelectronics	3,427	4.36	- + RFQ		Tube	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	670pF @ 0V, 1MHz	0 ns	130 µA @ 650 V	650 V	10A	-40°C ~ 175°C	1.45 V @ 10 A
CDLL485B DIODE GEN PURP 180V 200MA DO213 Microchip Technology	2,717	3.14	- + RFQ	Datasheet	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	-	100 µA @ 180 V	180 V	200mA	-65°C ~ 175°C	1 V @ 100 mA
HSM840J/TR13 DIODE SCHOTTKY 40V 8A DO214AB Microchip Technology	3,308	1.76	- + RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 40 V	40 V	8A	-55°C ~ 175°C	620 mV @ 8 A
1N5408-E3/73 DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division	2,385	0.00	- + RFQ	Datasheet	Cut Tape (CT),Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	5 µA @ 1000 V	1000 V	3A	-50°C ~ 150°C	1.2 V @ 3 A
UPR60/TR13 DIODE GEN PURP 600V 2A POWERMITE Microchip Technology	2,004	7.20	- + RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	30 ns	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.6 V @ 2 A
BYW178-TAP DIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division	2,864	0.59	- + RFQ	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	60 ns	1 µA @ 800 V	800 V	3A	-55°C ~ 175°C	1.9 V @ 3 A
JANTX1N4246 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	2,309	4.38	- + RFQ	Datasheet	Bulk	Military, MIL-PRF-19500/286	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	5 µs	1 µA @ 400 V	400 V	1A	-65°C ~ 175°C	1.3 V @ 3 A
CDLL0.5A20 DIODE SCHOTTKY 20V 500MA DO213AA Microchip Technology	2,953	3.14	- + RFQ	Datasheet	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	50pF @ 0V, 1MHz	-	10 µA @ 20 V	20 V	500mA	-65°C ~ 125°C	650 mV @ 500 mA
MBR60150PTE3/TU DIODE SCHOTTKY 60A 150V TO-247AD Microchip Technology	3,839	1.76	- + RFQ		Tube		RoHS	-	-	Active	-	-	-	-	-	-	-	-
1N5401-E3/73 DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division	2,334	0.00	- + RFQ	Datasheet	Cut Tape (CT),Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	-	5 µA @ 100 V	100 V	3A	-50°C ~ 150°C	1.2 V @ 3 A
UPR60/TR7 DIODE GEN PURP 600V 2A POWERMITE Microchip Technology	2,152	7.20	- + RFQ	Datasheet	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	30 ns	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.6 V @ 2 A
SF5406-TAP DIODE GEN PURP 600V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,761	0.59	- + RFQ	Datasheet	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	5 µA @ 600 V	600 V	3A	-55°C ~ 175°C	1.7 V @ 3 A
JAN1N3613/TR STD RECTIFIER Microchip Technology	2,347	4.38	- + RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/228	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 300 V	600 V	1A	-65°C ~ 175°C	1.1 V @ 1 A