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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTQ88N30P

IXTQ88N30P

MOSFET N-CH 300V 88A TO3P

IXYS

3,937 11.76
- +

RFQ

IXTQ88N30P

Datasheet

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 250µA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N100F

IXFH12N100F

MOSFET N-CH 1000V 12A TO247AD

IXYS

2,364 11.76
- +

RFQ

IXFH12N100F

Datasheet

Tube HiPerFET™, F Class Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 5.5V @ 4mA 77 nC @ 10 V ±20V 2700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH24P20

IXTH24P20

MOSFET P-CH 200V 24A TO247

IXYS

3,298 11.95
- +

RFQ

IXTH24P20

Datasheet

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 150mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R065C7XKSA1

IPW65R065C7XKSA1

MOSFET N-CH 650V 33A TO247-3

Infineon Technologies

3,398 12.20
- +

RFQ

IPW65R065C7XKSA1

Datasheet

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 17.1A, 10V 4V @ 850µA 64 nC @ 10 V ±20V 3020 pF @ 400 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N150HV

IXTA3N150HV

MOSFET N-CH 1500V 3A TO263

IXYS

3,097 12.39
- +

RFQ

IXTA3N150HV

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 3A (Tc) 10V 7.3Ohm @ 1.5A, 10V 5V @ 250µA 38.6 nC @ 10 V ±30V 1375 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMZ120R220M1HXKSA1

IMZ120R220M1HXKSA1

SICFET N-CH 1.2KV 13A TO247-4

Infineon Technologies

298 12.39
- +

RFQ

IMZ120R220M1HXKSA1

Datasheet

Bulk,Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 13A (Tc) 15V, 18V 220mOhm @ 4A, 18V 5.7V @ 1.6mA 8.5 nC @ 18 V +23V, -7V 289 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMW65R107M1HXKSA1

IMW65R107M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

3,289 12.46
- +

RFQ

Tube - Active - - - 20A (Tc) - - - - - - - - - -
SIHG80N60E-GE3

SIHG80N60E-GE3

MOSFET N-CH 600V 80A TO247AC

Vishay Siliconix

3,156 12.53
- +

RFQ

SIHG80N60E-GE3

Datasheet

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 80A (Tc) 10V 30mOhm @ 40A, 10V 4V @ 250µA 443 nC @ 10 V ±30V 6900 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA94N20X4

IXTA94N20X4

MOSFET 200V 94A N-CH ULTRA TO263

IXYS

3,914 12.54
- +

RFQ

IXTA94N20X4

Datasheet

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 94A (Tc) 10V 10.6mOhm @ 47A, 10V 4.5V @ 250µA 77 nC @ 10 V ±20V 5050 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SCT10N120AG

SCT10N120AG

SICFET N-CH 1200V 12A HIP247

STMicroelectronics

2,101 12.58
- +

RFQ

SCT10N120AG

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 12A (Tc) 20V 690mOhm @ 6A, 20V 3.5V @ 250µA 22 nC @ 20 V +25V, -10V 290 pF @ 400 V - 150W (Tc) -55°C ~ 200°C (TJ) Through Hole
STW13NK100Z

STW13NK100Z

MOSFET N-CH 1000V 13A TO247-3

STMicroelectronics

2,764 12.81
- +

RFQ

STW13NK100Z

Datasheet

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 1000 V 13A (Tc) 10V 700mOhm @ 6.5A, 10V 4.5V @ 150µA 266 nC @ 10 V ±30V 6000 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT90P10P

IXTT90P10P

MOSFET P-CH 100V 90A TO268

IXYS

3,515 12.86
- +

RFQ

IXTT90P10P

Datasheet

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 25mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5800 pF @ 25 V - 462W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT16N20D2

IXTT16N20D2

MOSFET N-CH 200V 16A TO268

IXYS

3,285 12.89
- +

RFQ

IXTT16N20D2

Datasheet

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) - 73mOhm @ 8A, 0V - 208 nC @ 5 V ±20V 5500 pF @ 25 V Depletion Mode 695W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH16P60P

IXTH16P60P

MOSFET P-CH 600V 16A TO247

IXYS

3,880 12.93
- +

RFQ

IXTH16P60P

Datasheet

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 720mOhm @ 500mA, 10V 4.5V @ 250µA 92 nC @ 10 V ±20V 5120 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3080ALGC11

SCT3080ALGC11

SICFET N-CH 650V 30A TO247N

Rohm Semiconductor

3,543 13.04
- +

RFQ

SCT3080ALGC11

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 30A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 134W (Tc) 175°C (TJ) Through Hole
IRF150P220AKMA1

IRF150P220AKMA1

MOSFET N-CH 150V 203A TO247-3

Infineon Technologies

2,076 13.74
- +

RFQ

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 203A (Tc) 10V 2.7mOhm @ 100A, 10V 4.6V @ 265µA 200 nC @ 10 V ±20V 12000 pF @ 75 V - 3.8W (Ta), 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK360N10T

IXFK360N10T

MOSFET N-CH 100V 360A TO264AA

IXYS

3,752 13.76
- +

RFQ

IXFK360N10T

Datasheet

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 360A (Tc) 10V 2.9mOhm @ 100A, 10V 5V @ 3mA 525 nC @ 10 V ±20V 33000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT94N30P3

IXFT94N30P3

MOSFET N-CH 300V 94A TO268

IXYS

231 13.92
- +

RFQ

IXFT94N30P3

Datasheet

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 102 nC @ 10 V ±20V 5510 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT16N10D2

IXTT16N10D2

MOSFET N-CH 100V 16A TO268

IXYS

2,532 14.06
- +

RFQ

IXTT16N10D2

Datasheet

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 0V 64mOhm @ 8A, 0V - 225 nC @ 5 V ±20V 5700 pF @ 25 V Depletion Mode 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVHL080N120SC1A

NVHL080N120SC1A

SICFET N-CH 1200V 31A TO247-3

onsemi

3,404 14.08
- +

RFQ

NVHL080N120SC1A

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25, -15V 1670 pF @ 800 V - 178W (Tc) -55°C ~ 175°C (TJ) Through Hole
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