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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFX120N65X2

IXFX120N65X2

MOSFET N-CH 650V 120A PLUS247-3

IXYS

3,551 24.34
- +

RFQ

IXFX120N65X2

Datasheet

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC040SMA120B

MSC040SMA120B

SICFET N-CH 1200V 66A TO247-3

Microchip Technology

3,366 25.87
- +

RFQ

MSC040SMA120B

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 20V 50mOhm @ 40A, 20V 2.7V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 323W (Tc) -55°C ~ 175°C (TJ) Through Hole
MSC040SMA120B4

MSC040SMA120B4

SICFET N-CH 1200V 66A TO247-4

Microchip Technology

154 26.64
- +

RFQ

MSC040SMA120B4

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 323W (Tc) -55°C ~ 175°C (TJ) Through Hole
VS-FC270SA20

VS-FC270SA20

MOSFET N-CH 200V 287A SOT227

Vishay General Semiconductor - Diodes Division

2,710 27.31
- +

RFQ

VS-FC270SA20

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 287A (Tc) 10V 4.7mOhm @ 200A, 10V 4.3V @ 1mA 250 nC @ 10 V ±20V 16500 pF @ 100 V - 937W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFN140N20P

IXFN140N20P

MOSFET N-CH 200V 115A SOT227B

IXYS

2,896 27.58
- +

RFQ

IXFN140N20P

Datasheet

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 115A (Tc) 10V, 15V 18mOhm @ 70A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 680W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXTH50P10

IXTH50P10

MOSFET P-CH 100V 50A TO247

IXYS

2,349 11.48
- +

RFQ

IXTH50P10

Datasheet

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 55mOhm @ 25A, 10V 5V @ 250µA 140 nC @ 10 V ±20V 4350 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW42N65M5

STW42N65M5

MOSFET N-CH 650V 33A TO247-3

STMicroelectronics

3,058 11.51
- +

RFQ

STW42N65M5

Datasheet

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 79mOhm @ 16.5A, 10V 5V @ 250µA 100 nC @ 10 V ±25V 4650 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
IXTH10P60

IXTH10P60

MOSFET P-CH 600V 10A TO247

IXYS

2,245 11.57
- +

RFQ

IXTH10P60

Datasheet

Tube - Active P-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 1Ohm @ 5A, 10V 5V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB60N80P

IXFB60N80P

MOSFET N-CH 800V 60A PLUS264

IXYS

2,049 28.89
- +

RFQ

IXFB60N80P

Datasheet

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 60A (Tc) 10V 140mOhm @ 30A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC080SMA120J

MSC080SMA120J

SICFET N-CH 1.2KV 35A SOT227

Microchip Technology

3,718 30.76
- +

RFQ

MSC080SMA120J

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 37A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) Chassis Mount
IPZ65R019C7XKSA1

IPZ65R019C7XKSA1

MOSFET N-CH 650V 75A TO247-4

Infineon Technologies

3,511 30.80
- +

RFQ

IPZ65R019C7XKSA1

Datasheet

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19mOhm @ 58.3A, 10V 4V @ 2.92mA 215 nC @ 10 V ±20V 9900 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0032120K

C3M0032120K

SICFET N-CH 1200V 63A TO247-4L

Wolfspeed, Inc.

3,408 32.58
- +

RFQ

C3M0032120K

Datasheet

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A (Tc) 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA 118 nC @ 15 V +15V, -4V 3357 pF @ 1000 V - 283W (Tc) -40°C ~ 175°C (TJ) Through Hole
IXFN420N10T

IXFN420N10T

MOSFET N-CH 100V 420A SOT227B

IXYS

2,508 32.85
- +

RFQ

IXFN420N10T

Datasheet

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 420A (Tc) 10V 2.3mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 47000 pF @ 25 V - 1070W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
UJ4SC075011K4S

UJ4SC075011K4S

750V/11MOHM, SIC, STACKED CASCOD

UnitedSiC

2,315 33.06
- +

RFQ

UJ4SC075011K4S

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 104A (Tc) 12V 14.2mOhm @ 60A, 12V 5.5V @ 10mA 75 nC @ 15 V ±20V 3245 pF @ 400 V - 357W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK240N25X3

IXFK240N25X3

MOSFET N-CH 250V 240A TO264

IXYS

2,051 33.68
- +

RFQ

IXFK240N25X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 240A (Tc) 10V 5mOhm @ 120A, 10V 4.5V @ 8mA 345 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK300N20X3

IXFK300N20X3

MOSFET N-CH 200V 300A TO264

IXYS

3,308 33.68
- +

RFQ

IXFK300N20X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 300A (Tc) 10V 4mOhm @ 150A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC400SMA330B4

MSC400SMA330B4

MOSFET SIC 3300 V 400 MOHM TO-24

Microchip Technology

2,390 34.29
- +

RFQ

Bulk - Active N-Channel SiCFET (Silicon Carbide) 3300 V 11A (Tc) 20V 520mOhm @ 5A, 20V 2.97V @ 1mA 37 nC @ 20 V +23V, -10V 579 pF @ 2400 V - 131W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX200N10L2

IXTX200N10L2

MOSFET N-CH 100V 200A PLUS247-3

IXYS

2,024 35.39
- +

RFQ

IXTX200N10L2

Datasheet

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 11mOhm @ 100A, 10V 4.5V @ 3mA 540 nC @ 10 V ±20V 23000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTN40P50P

IXTN40P50P

MOSFET P-CH 500V 40A SOT227B

IXYS

2,950 37.01
- +

RFQ

IXTN40P50P

Datasheet

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 230mOhm @ 500mA, 10V 4V @ 1mA 205 nC @ 10 V ±20V 11500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX110N20L2

IXTX110N20L2

MOSFET N-CH 200V 110A PLUS247-3

IXYS

2,680 37.67
- +

RFQ

IXTX110N20L2

Datasheet

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 110A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 3mA 500 nC @ 10 V ±20V 23000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
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