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Photo Mfr. Part # Availability Price Quantity Datasheet Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK32N100Q3

IXFK32N100Q3

MOSFET N-CH 1000V 32A TO264AA

IXYS

2,116 33.18
- +

RFQ

IXFK32N100Q3

Datasheet

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 8mA 195 nC @ 10 V ±30V 9940 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX240N25X3

IXFX240N25X3

MOSFET N-CH 250V 240A PLUS247-3

IXYS

690 33.62
- +

RFQ

IXFX240N25X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 240A (Tc) 10V 5mOhm @ 120A, 10V 4.5V @ 8mA 345 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX300N20X3

IXFX300N20X3

MOSFET N-CH 200V 300A PLUS247-3

IXYS

2,436 33.62
- +

RFQ

IXFX300N20X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 300A (Tc) 10V 4mOhm @ 150A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 23800 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX210N30X3

IXFX210N30X3

MOSFET N-CH 300V 210A PLUS247-3

IXYS

3,831 33.62
- +

RFQ

IXFX210N30X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 210A (Tc) 10V 5.5mOhm @ 105A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 24200 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT17F120J

APT17F120J

MOSFET N-CH 1200V 18A ISOTOP

Microchip Technology

3,849 34.07
- +

RFQ

APT17F120J

Datasheet

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) 10V 580mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT5010JVRU2

APT5010JVRU2

MOSFET N-CH 500V 44A SOT227

Microchip Technology

3,749 34.61
- +

RFQ

APT5010JVRU2

Datasheet

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 100mOhm @ 22A, 10V 4V @ 2.5mA 312 nC @ 10 V ±30V 7410 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFK52N100X

IXFK52N100X

MOSFET N-CH 1000V 52A TO264

IXYS

3,199 35.54
- +

RFQ

IXFK52N100X

Datasheet

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 52A (Tc) 10V 125mOhm @ 26A, 10V 6V @ 4mA 245 nC @ 10 V ±30V 6725 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR80N50Q3

IXFR80N50Q3

MOSFET N-CH 500V 50A ISOPLUS247

IXYS

2,749 36.24
- +

RFQ

IXFR80N50Q3

Datasheet

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 72mOhm @ 40A, 10V 6.5V @ 8mA 200 nC @ 10 V ±30V 10000 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN220N20X3

IXFN220N20X3

MOSFET N-CH 200V 160A SOT227B

IXYS

2,145 37.16
- +

RFQ

IXFN220N20X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 160A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFH150N30X3

IXFH150N30X3

MOSFET N-CH 300V 150A TO247

IXYS

3,131 21.63
- +

RFQ

IXFH150N30X3

Datasheet

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 8.3mOhm @ 75A, 10V 4.5V @ 4mA 177 nC @ 10 V ±20V 13100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX60N50L2

IXTX60N50L2

MOSFET N-CH 500V 60A PLUS247-3

IXYS

1,350 37.67
- +

RFQ

IXTX60N50L2

Datasheet

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 4.5V @ 250µA 610 nC @ 10 V ±30V 24000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTW90N65G2V

SCTW90N65G2V

SICFET N-CH 650V 90A HIP247

STMicroelectronics

2,481 38.02
- +

RFQ

SCTW90N65G2V

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 90A (Tc) 18V 25mOhm @ 50A, 18V 5V @ 250µA 157 nC @ 18 V +22V, -10V 3300 pF @ 400 V - 390W (Tc) -55°C ~ 200°C (TJ) Through Hole
APT77N60JC3

APT77N60JC3

MOSFET N-CH 600V 77A ISOTOP

Microchip Technology

3,447 38.39
- +

RFQ

APT77N60JC3

Datasheet

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 35mOhm @ 60A, 10V 3.9V @ 5.4mA 640 nC @ 10 V ±20V 13600 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
SCTWA50N120

SCTWA50N120

SICFET N-CH 1200V 65A HIP247

STMicroelectronics

3,971 38.53
- +

RFQ

SCTWA50N120

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 65A (Tc) 20V 69mOhm @ 40A, 20V 3V @ 1mA 122 nC @ 20 V +25V, -10V 1900 pF @ 400 V - 318W (Tc) -55°C ~ 200°C (TJ) Through Hole
STY139N65M5

STY139N65M5

MOSFET N-CH 650V 130A MAX247

STMicroelectronics

2,410 38.59
- +

RFQ

STY139N65M5

Datasheet

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 130A (Tc) 10V 17mOhm @ 65A, 10V 5V @ 250µA 363 nC @ 10 V ±25V 15600 pF @ 100 V - 625W (Tc) 150°C (TJ) Through Hole
IXFN230N20T

IXFN230N20T

MOSFET N-CH 200V 220A SOT227B

IXYS

3,798 38.72
- +

RFQ

IXFN230N20T

Datasheet

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 1090W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
SCTW100N65G2AG

SCTW100N65G2AG

SICFET N-CH 650V 100A HIP247

STMicroelectronics

2,139 39.56
- +

RFQ

SCTW100N65G2AG

Datasheet

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 100A (Tc) 18V 26mOhm @ 50A, 18V 5V @ 5mA 162 nC @ 18 V +22V, -10V 3315 pF @ 520 V - 420W (Tc) -55°C ~ 200°C (TJ) Through Hole
IXFB90N85X

IXFB90N85X

MOSFET N-CH 850V 90A PLUS264

IXYS

3,463 39.73
- +

RFQ

IXFB90N85X

Datasheet

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 90A (Tc) 10V 41mOhm @ 500mA, 10V 5.5V @ 8mA 340 nC @ 10 V ±30V 13300 pF @ 25 V - 1785W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT240N15X4HV

IXTT240N15X4HV

MOSFET N-CH 150V 240A TO268HV

IXYS

2,897 22.75
- +

RFQ

IXTT240N15X4HV

Datasheet

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 4.4mOhm @ 120A, 10V 4.5V @ 250µA 195 nC @ 10 V ±20V 8900 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTH4L020N120SC1

NTH4L020N120SC1

SICFET N-CH 1200V 102A TO247

onsemi

2,095 40.56
- +

RFQ

NTH4L020N120SC1

Datasheet

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 102A (Tc) 20V 28mOhm @ 60A, 20V 4.3V @ 20mA 220 nC @ 20 V +25V, -15V 2943 pF @ 800 V - 510W (Tc) -55°C ~ 175°C (TJ) Through Hole
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